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6th Generation Mega Power Dual IGBT Modules
Mitsubishi Electric is introducing its 6th generation Mega Power Dual (MPD) Insulated Gate Bipolar Transistor (IGBT) modules. The modules, which are for use in power converters such as large-capacity photovoltaic and wind power generation systems, are also suitable for other high-power applications e.g. in the areas of Uninterruptible ...
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Acoustically Mapping IGBT Module Solder Thickness
Previously, a Power Electronics Technology article titled “Inverted Acoustic System Cuts IGBT Failures” (September 2011) examined the use of an acoustic microscope to image heat-blocking defects such as voids and non-bonds in the solder typically used to bond a heat sink to the bottom side of an IGBT module. Finding these defects makes...
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IGBT Module Driver
Now available from MicroPower Direct, the IGD1205W is a hybrid integrated circuit specifically designed to drive N-channel IGBT modules. It provides the I/O isolation, high speed, drive voltage stability and fault protection required to control most MOS gated power devices. They are offered at very low cost. The IGD1205W converts TT...
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IGBT Module Handles 600 A At 650 V
A high power phase-leg in the SimBus-F outline from IXYS Corporation handles 600 A and 650 V. The performance of the discrete 650 Volt XPT Trench IGBT products is now also available in module outlines, up to 600 Amperes with the IXYS fast "Sonic" diodes. The XPT IGBT and Sonic diode are designed for parallel operation in high power mod...
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PowerSim IGBT Modules
Powerex, Inc. recently added several new NX-Series IGBT modules to its PowerSim app: CM200DX-34SA CM600DXL-34SA CM225DX-24S1 CM300DX-24S1 CM450DX-24S1 CM600DX-24S1 Parts ending in S1 denote the 6.1 Generation NX-Series IGBT product line, incorporating the 6.1 (Carrier Stored Trench Bipolar Transistor) CSTBT™ silicon, facilitating a ...
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Acoustic Imaging Of IGBT Modules Through The Heat Sink
Acoustic imaging of IGBT modules can spot gap-type defects in or among the materials bonded to create the module. IGBT failures are often caused by gap-types defects in or among the materials bonded to create the module. The defects may be voids, delaminations, disbonds, or may involve the tilting of a layer, typically the ceram...
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1200V SiC Schottky Diodes Enables Higher Efficiency and Reliability
Infineon Technologies AG expands the comprehensive SiC portfolio introducing the 5th generation1200V thinQ!™ SiC Schottky diodes. The new 1200V SiC diodes feature ultra-low forward voltage even at operating temperatures, more than 100 percent improved surge current capability and excellent thermal behavior. These features result in sig...
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Bypass diode upgrade boosts solar panel efficiency
STMicroelectronics (ST) announces an innovation for solar panels aimed at allowing more of the energy from each cell to reach the power grid. The innovation replaces the simple bypass diode with an intelligent device that enhances efficiency and offers the same package outline. ST’s new SPV1001 contains a low-loss power switch and a...
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High Power TVS Diodes Deliver Industry-Standard Bidirectional Port Protection
[caption id="attachment_1118" align="alignnone" width="595"] High Power TVS Diodes[/caption] Bourns, Inc. has introduced high Power TVS diodes that feature high current bidirectional port protection and meet industry standards including IEC 61000-4-5 8/20 µs current surge requirements. Designated Bourns® Models PTVS10-058C...
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Silicon Power Schottky Diodes for High Frequency Applications
America Semiconductor, LLC announced the release of its SD51 silicon power Schottky diodes. The DO-5 stud-mount parts feature a continuous forward current of 60 A, and repetitive peak reverse voltage of 45 V. Optimized for very low forward voltage drop with moderate leakage, the parts notably offer high surge capability. The diodes' te...
