Schottky Diodes
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1200V SiC Schottky Diodes Enables Higher Efficiency and Reliability
Infineon Technologies AG expands the comprehensive SiC portfolio introducing the 5th generation1200V thinQ!™ SiC Schottky diodes. The new 1200V SiC diodes feature ultra-low forward voltage even at operating temperatures, more than 100 percent improved surge current capability and excellent thermal behavior. These features result in sig...
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Silicon Power Schottky Diodes for High Frequency Applications
America Semiconductor, LLC announced the release of its SD51 silicon power Schottky diodes. The DO-5 stud-mount parts feature a continuous forward current of 60 A, and repetitive peak reverse voltage of 45 V. Optimized for very low forward voltage drop with moderate leakage, the parts notably offer high surge capability. The diodes' te...
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Carbide Schottky Silicon Diodes Push the Performance Envelope
ROHM Semiconductor announces the availability of the SCS1xxAGC series of high-performance silicon carbide (SiC) Schottky barrier diodes (SBD). This new series of SiC diodes offers industry-leading low forward voltage and fast recovery time, leading to improved power conversion efficiency in applications such as PFC/power supplies, sola...
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1700V SiC Schottky Diodes
Cree, Inc. has introduced a series of diodes that deliver the industry's highest blocking voltage available in SiC Schottky technology. Cree's 1700V Z-Rec® Schottky diodes virtually eliminate the reverse recovery losses suffered in silicon PiN diode alternatives, enabling ultra-efficient, smaller and lighter systems-all with improved r...
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The 5th generation 1200V SiC Schottky Diodes
[caption id="attachment_185" align="alignnone" width="595"] Sic schottky diodes[/caption] Infineon AG expands the comprehensive SiC portfolio introducing the 5th generation 1200V thinQ!™ SiC Schottky diodes. The 1200V SiC diodes feature ultra-low forward voltage even at operating temperatures, more than 100 percent improved surge curr...
