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High Power Modules Now Last Up to 11 Times Longer
In the future it will be possible to use IGBT High Power Modules (IHM) from Infineon Technologies AG even longer. More robust construction and greatly improved thermal conductivity behavior increase the average life time in comparison to previous models by a factor of up to 11 under the same conditions of use. A major advantage here is...
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Hybrid Circuits Optimize Gate Drive and Protect High Power IGBT Modules
High power IGBT module applications usually require a completely isolated gate drive, as shown In Figure 1. This circuit isolates the logic level control from fault feedback signals using optocouplers and separate isolated power supplies for each gate driver. Its advantages include: Stable on and off drive driving voltages that ar...
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Solderable and Sinterable Top Side Bonding for High Power IGBT Wafers
IXYS Corporation has introduced solderable or sinterable top side on 200 and 300 Amps, 650 Volt Trench XPTTM IGBT silicon dies. The top side solderable metallization improves the power cycling capabilities of power modules. Replacing the standard bond wire connections by using the standard soldering process improves the power cycli...
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High Megawatt 3-Level Press-Pack IGBT Inverter Stacks
IXYS Corporation’s wholly owned UK subsidiary, IXYS UK Westcode Ltd., has introduced a range of standard three-level press-pack IGBT phase leg stacks with power rating up to 16 Megawatts. The new stack designs are available for applications at three voltage levels 3.3 kV, 6.6 kV and 10 kV and incorporate IXYS UK's market leading pre...
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Powerex QID3320004 Attains UL Recognition
This Dual IGBT HVIGBT module makes use of the latest Mitsubishi R-Series chip technology, which offers lower losses, a more rugged SWSOA and RRSOA, and a higher current handling capability as compared to previous generations of chip technology. Highly insulated housings offer enhanced protection by means of greater creepage and stri...
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IGBT Intelligent Power Modules
Microsemi Corporation announced a line of intelligent half bridge Insulated Gate Bipolar Transistor (IGBT) standard power modules, including five products that simplify system design and are each available in the company's proprietary low-profile LP8 package. Microsemi's intelligent power modules are targeted at applications ranging...
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Energy-Saving IGBTs Boosts Efficiency, Reliability
The HB series of Insulated-Gate Bipolar Transistors (IGBTs) from STMicroelectronics have up to 40% lower turn-off energy losses than competing high-frequency devices, while reducing conduction losses by up to 30%. Leveraging ST's advanced Trench-Gate Field-Stop High-Speed technology, the HB series has a minimal collector-current tur...
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Power Modules Have Automotive Qualification
Infineon Technologies AG launches its new EconoDUALT 3 IGBT modules, which are fully qualified according to automotive standards. The new offering addresses demanding applications in commercial, construction or agricultural vehicles where extended reliability is a key. Automotive qualification means that the modules provide significant...
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Modules for 3-Phase Photovoltaic Inverters up to 10kVA
Infineon has extended its family of tailor-made modules for photovoltaic (PV) string and multi-string inverters, offering optimized inverter efficiency and performance. Fast and solder-less assembly is possible using the proven PressFIT technology. The full product family now features twelve different IGBT modules that can be easily co...
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IGBT Gate Drive Targets Industrial Apps
Amantys announced the launch of a new Insulated Gate Bipolar Transistor (IGBT) Gate Driver operating at 3.3 kV, 4.5 kV and 6.5 kV, with significantly improved reliability and protection in high power modules targeting the most demanding applications, including wind turbines, locomotive, HVDC and industrial drives. The product family...