CODING INTERNATIONAL CO LTD

ROHM Semiconductor announces the availability of the SCS1xxAGC series of high-performance silicon carbide (SiC) Schottky barrier diodes (SBD). This new series of SiC diodes offers industry-leading low forward voltage and fast recovery time, leading to improved power conversion efficiency in applications such as PFC/power supplies, solar panel inverters, uninterruptible power supplies, air conditioners and others.
The SCS1xxAGC series maintains low forward voltage over a wide operating temperature range which results in lower power dissipation under actual operating conditions. For example, the 10 A rated part has a VF of 1.5 V at 25°C and 1.6 V at 150°C. Low VF reduces conduction loss while the ultra-short reverse recovery time (15 ns, typical) enables high-speed switching and minimizes switching loss.

With the acquisition of SiCrystal AG, ROHM Semiconductor possesses total manufacturing capability for SiC semiconductors from ingot formation to power device fabrication. This allows the rapid development of advanced products and complete control of raw materials for industry leading reliability and quality.

SiC is the perfect material for power electronics featuring its high breakdown voltage, low power loss, high operating temperature and superior thermal conductivity. ROHM is introducing devices with a few differentiating features such as low VF and also the highest current rating at 600 V (a real 600 V/20 A SBD, not dual 2×10 A). These diodes are however the first in ROHM’s SiC product lineup. What’s more, it hase 1200 V SBDs and MOSFETs, currently in sampling at strategic partners, to deal with higher power applications such as UPS and also to enable all-SiC power devices.