Power Module
Label Power Module article
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High-Frequency Power Module is First to Use All Silicon Carbide
Employing all SiC construction, the CAS100H12AM1 from Cree is a 1200 V, 100 A power module configured in a 50 mm half-bridge circuit with five 1200 V, 80 mΩ Z-FET MOSFETs and five 1200V Z-Rec Schottky diodes (Fig. 1). Maximum junction temperature for the MOSFETs are 150°C and the diodes are 175°C. Modules are rated to 125°C maximum cas...
